[17a-B5-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17a-B5-9] Properties of InGaAs/InAlAs Quantum Wells Grown on (111)InP Substrates by MBE

〇Yuichi Kawamura¹, Azusa Taniguchi¹ (1.Osaka Pref. Univ.)

Keywords:compound semiconductor, quamtum well structure, InP substrate

InGaAs/InAlAs quantum well structures grown on InP are very usufull for quantu well lasrs for optical cummunication system and quantum cascade lasers in the mid-infrared wavelength region. However, experimental research for the growth on (111) InP is very few because of the difficulty of high quarity epitaxial growth. In this paper, tilt direction dependence of the (111)B InP substrate on the properties of the epitaxial layers were studied.