[17a-P4-1~39] 12.3 Functional Materials and Novel Devices

△ [17a-P4-22] Fabrication of NIR-Photo-Thermo-Electric Conversion Devices using Low Energy Gap Semiconducting Polymers

〇Tsukasa Hasegawa¹, Minoru Ashizawa¹, Takaaki Manaka², Susumu Kawauchi¹, Hidetoshi Matsumoto¹ (1.Tokyo Tech., 2.Tokyo Tech)

Keywords:low energy gap polymer, NIR

Near-infrared photo-thermo-electric (NIR-PTE) materials convert absorbed light energy into electrical energy via thermal energy. In our previous study, we have synthesized NIR absorption active conjugated polymers, which showed ultra-low energy gap (below 0.60 eV) and relatively high electrical conductivity (σ ≈ 10^-2 S cm^-1). In the present study, we have fabricated the NIR-PTE conversion devices using the prepared polymers and investigated their performances from the viewpoint of their electronic structures and thin film microstructures.