[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[17p-301-4] Study on the Effects of Coexisting O₂ on Wet Oxidation of 4H-SiC Si-face Based on the Changes of Oxidation Rate

〇Kei Ishinoda¹, Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:SiC, wet oxidation, oxidation rate

In order to improve the characteristics of SiC/SiO₂ interface, it is necessary to understand the oxidation mechanism. In this research, we focused on interface reaction among the oxidation steps, and systematically investigated the oxidation temperature dependence and the H₂O/O₂ ratio dependence of wet oxidation rate on Si face. As a result, it was revealed that oxidation mechanism under coexistence of O₂ and H₂O was different from O₂ or H₂O oxidation.