[17p-302-1~14] 12.4 Organic light-emitting devices and organic transistors

[17p-302-12] Programming Time of Organic Ferroelectric Memory Transistors

〇Ryo Sugano¹, Tomoya Tashiro¹, Tomohito Sekine¹, Hiroyuki Matsui¹, Daisuke Kumaki¹, Fabrice Domingues Dos Santos², Atsushi Miyabo³, Shizuo Tokito¹ (1.Yamagata Univ. ROEL, 2.Piezotech, 3.ARKEMA K. K.)

Keywords:Ferroelectric polymer, Ferroelectric memory

Organic ferroelectric memory transistor (OFMT) using organic ferroelectrics as an insulatior of organic thin film transistor has features such as their small area and nonvolatility. Although it can be predicted that the programming time of OFMT is the sum of the time of "channel formation" and "ferroelectric polarization ", it is unclear which is dominant. It was revealed that the programming time of OFMT is dominated by "ferroelectric polarization" by independently measurement of OFMT and ferroelectric capacitor.