The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

12 Organic Molecules and Bioelectronics » 12.4 Organic light-emitting devices and organic transistors

[17p-302-1~14] 12.4 Organic light-emitting devices and organic transistors

Fri. Mar 17, 2017 1:15 PM - 5:00 PM 302 (302)

Toshinori Matsushima(Kyushu Univ.), Takeo Minari(NIMS)

4:15 PM - 4:30 PM

[17p-302-12] Programming Time of Organic Ferroelectric Memory Transistors

Ryo Sugano1, Tomoya Tashiro1, Tomohito Sekine1, Hiroyuki Matsui1, Daisuke Kumaki1, Fabrice Domingues Dos Santos2, Atsushi Miyabo3, Shizuo Tokito1 (1.Yamagata Univ. ROEL, 2.Piezotech, 3.ARKEMA K. K.)

Keywords:Ferroelectric polymer, Ferroelectric memory

Organic ferroelectric memory transistor (OFMT) using organic ferroelectrics as an insulatior of organic thin film transistor has features such as their small area and nonvolatility. Although it can be predicted that the programming time of OFMT is the sum of the time of "channel formation" and "ferroelectric polarization ", it is unclear which is dominant. It was revealed that the programming time of OFMT is dominated by "ferroelectric polarization" by independently measurement of OFMT and ferroelectric capacitor.