The 64th JSAP Spring Meeting, 2017

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-503-1~10] 15.4 III-V-group nitride crystals

Fri. Mar 17, 2017 1:45 PM - 4:30 PM 503 (503)

Munetaka Arita(Univ. of Tokyo), Mark Holmes(The University of Tokyo)

3:15 PM - 3:30 PM

[17p-503-6] Dependence of filling process of nonradiative recombination centers on dislocation density in InGaN-based light emitting diodes

〇Hideaki Murotani1, Yoichi Yamada2 (1.NIT, Tokuyama Coll., 2.Yamaguchi Univ.)

Keywords:internal qunatum efficiency, InGaN-based LED