Study on Potential Barrier of InGaN Quantum Well Structures by Spot Cathodoluminescence

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Mar 17, 2017 1:45 PM - 4:30 PM 503 (503)

Munetaka Arita(Univ. of Tokyo), Mark Holmes(The University of Tokyo)

3:30 PM - 3:45 PM

〇Satoshi Kurai¹, Shota Higaki¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)

Keywords:cathodoluminescence, InGaN, potential barrier