[17p-F204-1~12] 3.15 シリコンフォトニクス

▲ [17p-F204-5] Modeling and Benchmarking of Si-Photonics Hybrid MOS Optical Modulators

〇BOEUF Frederic^1,3、HAN Jae-Hoon^1,2、TAKAGI Shinichi^1,2、TAKENAKA Mitsuru^1,2 (1.The Univ. Of Tokyo、2.JST-CREST、3.JSPS-Fellow)

キーワード：Si-photonics, Hybrid Optical Modulators, Benchmarking

Recently the combination of the increasing demands of 100G transceiver and the availability of technology manufacturing in 300mm CMOS fabs allowed the Si-photonics to emerge at the industrial level as a strong competitor in the optical transceiver market. If PN junction based modulators are the most common structures used in Si-photonics chips, MOS based modulator are also attractive devices due to their compact size and low power consumption. In order to improve the performance of this devices it has been previously proposed to combine Si with material having better electro-optical properties such as SiGe or InGaAsP. In this work we propose to benchmark the performance of various hybrid structures using a system level figure of merit (FOM) based on Optical Modulation Amplitude rather than on conventional VpiLpi Criteria to determine the best candidates for the future high datarate applications.