The 64th JSAP Spring Meeting, 2017

Presentation information

Poster presentation

15 Crystal Engineering » 15.2 II-VI and related compounds

[17p-P1-1~4] 15.2 II-VI and related compounds

Fri. Mar 17, 2017 1:30 PM - 3:30 PM P1 (BP)

1:30 PM - 3:30 PM

[17p-P1-2] Growth of CdS thin films by mist chemical vapor deposition

Kazuyuki Uno1, Yuuka Takimoto1, Ichiro Tanaka1 (1.Wakayama University)

Keywords:semiconductor, cadmium sulfide, mist chemical vapor deposition

We successfully grew cadmium sulfide (CdS) by mist chemical vapor deposition using aqueous solutions of cadmium chloride and thiourea. The color of the grown films was yellow and the thickness was 200-500nm. Their crystal structure was wurtzite structure estimated by X-ray diffraction measurements. They were polycrystalline films and the grain sizes were 300-500nm in diameter. The absorption edge was 490nm by optical absorption measurements.