[17p-P2-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-P2-11] Structural modification of InAs quantum-dot layers by Sb-irradiated thermal annealing

〇(B)Akinori Makaino¹, Shingo Oikawa¹, Katsuyoshi Sakamoto¹, Koichi yamaguchi¹ (1.UEC)

Keywords:molecular beam epitaxy, quantum dot, semiconductor