[17p-P2-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-P2-13] Al material dependence in InAs substrate AlGaAsSb growth by MOVPE

〇Yuya Yamagata¹, Keita Yoshimoto¹, Yuga Imamura¹, Masakazu Arai¹ (1.Miyazaki Univ.)

Keywords:Al material dependence

In the mid-infrared band which has drawn attention in recent years, environment gas and city gas can be detected with high sensitivity.In this research, we aim to realize material of type-I type heterostructure of wavelength band which was difficult to realize so far.In this case, it is considered that trimethylaluminum (TMAl) in which the decomposition efficiency sharply declines at 600 ° C or less with respect to antimony which grows AlGaAsSb with different Al material on the InAs substrate and needs low temperature, and Improvement of crystallinity and improvement of growth rate were attempted by using triisobutylaluminum (TIBAl).