[17p-P2-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-P2-9] High intensity and broadband emission at 1 µm from InGaAs thin film with a 3D interface

〇Shingo Kanehira¹, Yuuma Hayashi¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Naoki Ikeda³, Yoshimasa Sugimoto³, Richard A. Hogg⁴ (1.Wakayama Univ., 2.NEC, 3.NIMS, 4.Univ. Glasgow)

Keywords:Molecular beam epitaxy, InGaAs thin layer, Nano material