Fabrication of microscopic light emitting structure for high-directional micro-LED by selective area growth

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Mar 17, 2017 1:30 PM - 3:30 PM P3 (BP)

1:30 PM - 3:30 PM

〇Naoto Kumagai¹, Tokio Takahashi¹, Guangwei Cong¹, Xuelun Wang¹, Misato Satoshi¹ (1.AIST)

Keywords:Nitride Semiconductor, Selective area growth, MOCVD