[17p-P3-1~22] 15.4 III-V-group nitride crystals

[17p-P3-18] Fabrication of microscopic light emitting structure for high-directional micro-LED by selective area growth

〇Naoto Kumagai¹, Tokio Takahashi¹, Guangwei Cong¹, Xuelun Wang¹, Misato Satoshi¹ (1.AIST)

Keywords:Nitride Semiconductor, Selective area growth, MOCVD