Kazunari Kawamoto

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 1:30 PM - 3:30 PM PB (Shirotori Hall)

Poster presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[21p-PB6-1~10] 15.6 Group IV Compound Semiconductors (SiC)

1:30 PM - 3:30 PM

[21p-PB6-10] Improvement of Drain-Source Current Leakage by Formation of a High Temperature Ion Implantation Mask of SiC Trench MOSFET Device without Dry Etching Process

〇Kazunari Kawamoto¹, Yusuke Kobayashi¹, Takenori Fujiwara², Toru Okazawa², Makoto Hayasaka², Naoyuki Oose³, Shinsuke Harada¹, Hajime Okumura¹ (1.AIST, 2.Toray, 3.Fuji Electric)

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