9:15 AM - 9:30 AM [21a-141-2] Partial Dislocation Analysis by Photoluminescence Imaging and Spectroscopy in 4H-SiC Epitaxial Layers 〇Johji Nishio1, Mitsuhiro Kushibe1, Aoi Okada1, Chiharu Ota1 (1.Toshiba Corp.)