Hiroki Nakaie

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Speaker, Author, Co-Author

Tue. Sep 18, 2018 1:30 PM - 3:30 PM PB (Shirotori Hall)

Poster presentation
| 13 Semiconductors
| 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[18p-PB2-1~7] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

1:30 PM - 3:30 PM

[18p-PB2-7] Development of Nickel Silicide formation mothod for Si-ULSI by using hydrogen radical heating

〇(DC)Hiroki Nakaie¹, Tetsuji Arai¹, Kazuki Kamimura¹, Kesuke Arimoto¹, Kosuke Hara¹, Mai Shirakura¹, Chiaya Yamamoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu² (1.Univ. of Yamanashi, 2.SST Inc.)

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