Takahiro Yamada

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 3:00 PM - 6:45 PM CE (Century Hall)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

4:15 PM - 4:30 PM

[19p-CE-9] Synchrotron Radiation XPS Study of Thermal Oxidation of SiO₂/p-GaN Interface

〇Takahiro Yamada¹, Daiki Terashima¹, Mikito Nozaki¹, Hisashi Yamada², Tokio Takahashi², Mitsuaki Shimizu², Akitaka Yoshigoe³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST, 3.JAEA)

4:30 PM - 4:45 PM

[19p-CE-10] Evaluation of Electrical Properties of SiO₂/p-GaN MOS Capacitors

〇Takahiro Yamada¹, Daiki Terashima¹, Mikito Nozaki¹, Hisashi Yamada², Tokio Takahashi², Mitsuaki Shimizu², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

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