Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 19, 2018 1:00 PM - 3:15 PM 224A (224-1)

Keisuke Ide(Tokyo Tech.), Shizuo Fujita(京大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:30 PM

▲ [19p-224A-1] [JSAP Paper Award Speech] Delta-doped β-gallium oxide field-effect transistor

Sriram Krishnamoorthy¹, Zhanbo Xia², Sanyam Bajaj², Mark Brenner², 〇Siddharth Rajan² (1.Univ. of Utah, 2.Ohio State Univ.)

1:30 PM - 1:45 PM

[19p-224A-2] TFT Characterization and Effects of Substrate in Al-doped ZnO Thin-Film Transistor by Solution Method

〇Kazuyori Oura¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech. NMRC)

1:45 PM - 2:00 PM

[19p-224A-3] Hot-wire hydrogenation for In-Sn-Zn-O and improvement of the TFT reliability

〇(M2)Toshiki Yanagisawa¹, Yuta Someya¹, Kousaku Shimizu¹ (1.Nihon Univ.)

2:00 PM - 2:15 PM

[19p-224A-4] Hump Phenomena of a-IGZO TFT with Top Gate Structure

〇Yuya Kuwahara¹, Kazushige Takechi¹, Jun Tanaka¹ (1.Tianma Japan)

2:15 PM - 2:30 PM

[19p-224A-5] Correspondence between PL spectra and conductive properties of ZnO films - III

〇Housei Akazawa¹ (1.NTT DIC)

2:30 PM - 2:45 PM

[19p-224A-6] Growth of ZnO nanorods by chemical bath deposition and their inorganic-organic hybrid heterojunctions with PEDOT:PSS

〇Shohei Obara¹, Tomoaki Terasako¹, Akira Miyata², Junichi Nomoto³, Tetsuya Yamamoto³ (1.Ehime Univ. Grad school, 2.Ehime Univ., 3.Kochi Univ. of Tech.)

2:45 PM - 3:00 PM

[19p-224A-7] Chemical Bath Deposition of ZnO Nanorods and Effects of Seed Layer on Their Structural and Photoluminescence Properties

〇Tomoaki Terasako¹, Shohei Obara¹, Masakazu Yagi², Junichi Nomoto³, Tetsuya Yamamoto³ (1.Grad. School Sci. Eng., Ehime Univ., 2.Natl. Inst. Technol., Kagawa Coll., 3.Research Inst., Kochi Univ. Technol.)

3:00 PM - 3:15 PM

[19p-224A-8] Carrier density in Ga-doped ZnO film and related crystalline defects after annealing

〇Yasuji Yamada¹, Yumika Yamada², Takumi Yamamoto³, Rei Sugiura³, Shuhei Funaki¹ (1.Shimane Unive., 2.Shimane Unive. 2, 3.Shimane Unive. 3)

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