Oral presentation

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[19p-231A-1~8] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Wed. Sep 19, 2018 1:15 PM - 3:30 PM 231A (231-1)

Tamihiro Gotoh(Gunma Univ.), Norimitsu Yoshida(Gifu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:15 PM - 1:30 PM

△ [19p-231A-1] Dynamical control of phase-change material coated Janus particles

〇Ryo Soma¹, Eiji Yamamoto¹, Kei Yamaguchi¹, Bokusui Nakayama¹, Masashi Kuwahara², Toshiharu Saiki¹ (1.Keio Univ., 2.AIST)

1:30 PM - 1:45 PM

△ [19p-231A-2] Terahertz spectroscopic characterization of Ge₂Sb₂Te₅ phase change material

〇Kotaro Makino¹, Kosaku Kato², Yuta Saito¹, Paul Fons¹, Alexander V. Kolobov¹, Junji Tominaga¹, Takashi Nakano¹, Makoto Nakajima² (1.AIST, 2.Osaka Univ.)

1:45 PM - 2:00 PM

△ [19p-231A-3] Understanding the Electronic Structure of Transition-Metal Based Phase-Change Material for Non-Volatile Memory Application

〇Yuta Saito¹, Yuji Sutou², Paul Fons¹, Alexander V. Kolobov¹, Satoshi Shindo³, Shogo Hatayama², Shuang Yi², Xeniya Kozina⁴, Jonathan M. Skelton⁵, Keisuke Kobayashi⁶ (1.AIST, 2.Tohoku Univ., 3.Tohoku Univ.(Present:Nagaoka Univ. Tech.), 4.Helmholtz-Zentrum, 5.Univ. Bath, 6.JASRI)

2:00 PM - 2:15 PM

[19p-231A-4] Crystallization mechanism of inverse resistance change Cr₂Ge₂Te₆ phase change material

〇Shogo Hatayama¹, Yuji Sutou¹, Daisuke Ando¹, Junichi Koike¹, Yuta Saito², Satoshi Shindo³, Yun-Heub Song⁴ (1.Tohoku Univ., 2.AIST, 3.Tohoku Univ. (Present Nagaoka Univ. Tech.), 4.Hanyang Univ.)

2:30 PM - 2:45 PM

[19p-231A-5] Near infrared absorption in Ge₂Sb₂Te₅ films

〇Tamihiro Gotoh¹ (1.Gunma Univ.)

2:45 PM - 3:00 PM

[19p-231A-6] Crystals growth of GeTe nanowire by vapor growth method

〇(M2)Kazuki Nakaya¹, Yusuke Imanishi¹, Eita Yamaguchi¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

3:00 PM - 3:15 PM

[19p-231A-7] Real-time resistance measurement of gamma-ray irradiation on Ge-(Sb)-Te thin films

〇(M1)Hyoseong Park¹, Isao Yoda², Shigeo Kawasaki³, Toshihiro Nakaoka¹ (1.Sophia Univ., 2.Tokyo Tech, 3.JAXA)

3:15 PM - 3:30 PM

[19p-231A-8] Effect of Textured Glass Substrates on the Crystallization Mechanism of Electron-Beam-Evaporated Amorphous Si Films Induced by FLA

〇Keisuke Kurata¹, Keisuke Ohdaira¹ (1.JAIST)

Session information

[19p-231A-1~8] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

△ [19p-231A-1] Dynamical control of phase-change material coated Janus particles

△ [19p-231A-2] Terahertz spectroscopic characterization of Ge₂Sb₂Te₅ phase change material

△ [19p-231A-3] Understanding the Electronic Structure of Transition-Metal Based Phase-Change Material for Non-Volatile Memory Application

[19p-231A-4] Crystallization mechanism of inverse resistance change Cr₂Ge₂Te₆ phase change material

[19p-231A-5] Near infrared absorption in Ge₂Sb₂Te₅ films

[19p-231A-6] Crystals growth of GeTe nanowire by vapor growth method

[19p-231A-7] Real-time resistance measurement of gamma-ray irradiation on Ge-(Sb)-Te thin films

[19p-231A-8] Effect of Textured Glass Substrates on the Crystallization Mechanism of Electron-Beam-Evaporated Amorphous Si Films Induced by FLA

Authentication

Session information

[19p-231A-1~8] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

△ [19p-231A-1] Dynamical control of phase-change material coated Janus particles

△ [19p-231A-2] Terahertz spectroscopic characterization of Ge2Sb2Te5 phase change material

△ [19p-231A-3] Understanding the Electronic Structure of Transition-Metal Based Phase-Change Material for Non-Volatile Memory Application

[19p-231A-4] Crystallization mechanism of inverse resistance change Cr2Ge2Te6 phase change material

[19p-231A-5] Near infrared absorption in Ge2Sb2Te5 films

[19p-231A-6] Crystals growth of GeTe nanowire by vapor growth method

[19p-231A-7] Real-time resistance measurement of gamma-ray irradiation on Ge-(Sb)-Te thin films

[19p-231A-8] Effect of Textured Glass Substrates on the Crystallization Mechanism of Electron-Beam-Evaporated Amorphous Si Films Induced by FLA

Authentication

△ [19p-231A-2] Terahertz spectroscopic characterization of Ge₂Sb₂Te₅ phase change material

[19p-231A-4] Crystallization mechanism of inverse resistance change Cr₂Ge₂Te₆ phase change material

[19p-231A-5] Near infrared absorption in Ge₂Sb₂Te₅ films