Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21a-146-1~12] 15.4 III-V-group nitride crystals

Fri. Sep 21, 2018 9:00 AM - 12:15 PM 146 (Reception Hall)

Motoaki Iwaya(Meijo Univ.), Takayuki Nakano(Shizuoka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [21a-146-1] Fabrication Process of InGaN High-Order Deeply Etched DBR Laser

〇(M2)So Kusumoto¹, Daiki Tazuke¹, Kazuhisa Ikeda¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Grad. School of Eng., Osaka Univ.)

9:15 AM - 9:30 AM

[21a-146-2] Design of Transverse Quasi-Phase-Matched AlN Tapered Waveguide SHG Device
for Broadening Wavelength Acceptance Bandwidth

〇(M2)Shuhei Yamaguchi¹, Asahi Yamauchi¹, Masahiro Uemukai¹, Yusuke Hayashi², Hideto Miyake², Keishi Shiomi¹, Yasufumi Fujiwara¹, Ryuji Katayama¹ (1.Grad. School of Eng., Osaka Univ., 2.RIS, Mie Univ.)

9:30 AM - 9:45 AM

△ [21a-146-3] Fabrication of Large Area Polarity-Inverted GaN by Surface-Activated Wafer Bonding

〇(M2)Takuya Onodera¹, Masahiro Uemukai¹, Kazuya Takahashi², Motoaki Iwaya², Isamu Akasaki², Yusuke Hayashi³, Hideto Miyake³, Maki Kushimoto⁴, Heajeong Cheong⁵, Yoshio Honda⁵, Hiroshi Amano⁵, Ryuji Katayama¹ (1.Grad. School of Eng., Osaka Univ., 2.Fac. Sci. & Tech., Meijo Univ., 3.RIS, Mie Univ., 4.Dept. of Electronics, Nagoya Univ., 5.Nagoya Univ. IMaSS)

9:45 AM - 10:00 AM

[21a-146-4] Device characterization of Multi-Quantum-Shell LED

〇Hideki Murakami¹, Atsushi Suzuki¹, Kyohei Nokimura¹, Minoru Takebayashi¹, Nanami Goto¹, Mizuki Terazawa¹, Naoki Sone^1,3, Iida Kazuyoshi^1,4, Masaki Ohya^1,4, Satoshi Kamiyama¹, Takeuchi Tetsuya¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Koito Manufacturing, 4.Toyoda Gosei)

10:00 AM - 10:15 AM

[21a-146-5] Fabrication of penetration-type GaN-μLED for optical stimulation to brain tissue

〇Hiroki Yasunaga¹, Hiroto Sekiguchi¹ (1.Toyohashi Tech)

10:15 AM - 10:30 AM

[21a-146-6] 1.6-Gbps AlGaN LED-based ultraviolet wireless communication at 280 nm in sunlight

〇Kazunobu Kojima¹, Yuki Yoshida², Masaki Shiraiwa², Yoshinari Awaji², Atsushi Kanno², Naokatsu Yamamoto², Shigefusa Chichibu¹ (1.IMRAM, Tohoku Univ., 2.NICT)

10:45 AM - 11:00 AM

[21a-146-7] Improvement in emission efficiency of UVC-LEDs by strain relaxation

〇Kentaro Nagamatsu¹, Kenjiro Uesugi¹, Hideto Miyake¹, Harumasa Yoshida¹ (1.Mie University)

11:00 AM - 11:15 AM

[21a-146-8] Development of 240 nm-band high output power AlGaN UVC LED

〇(M1)Toshiya Ishiguro^1,2, Reiji Nakamura^1,2, Sachie Fujikawa³, Noritoshi Maeda¹, Ryuto Machida², Hiroki Fujishiro², Hideki Hirayama¹ (1.RIKEN, 2.Tokyo University of Science, 3.Tokyo Denki Univ.)

11:15 AM - 11:30 AM

▲ [21a-146-9] Over 20 mW operation of 303 nm AlGaN UVB LED with p-AlGaN transparent contact layer

〇Muhammad Ajmal Khan^1,2, Noritoshi Maeda^1,2, Masafumi Jo^1,2, Hideki Hirayama^1,2 (1.RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198, Japan, 2.RIKEN Center for Advanced Photonics (RAP), 2-1, Hirosawa, Wako, Saitama 351-0198, Japan)

11:30 AM - 11:45 AM

[21a-146-10] Investigation of p-type highly reflective Ru electrode for AlGaN Deep UV LED

〇Noritoshi Maeda¹, Hideki Hirayama¹ (1.RIKEN)

11:45 AM - 12:00 PM

[21a-146-11] Highly efficient operation of AlGaN DUV LED by p-type dot electrodes and reflector

〇Noritoshi Maeda¹, Joosun Yun¹, Hideki Hirayama¹ (1.RIKEN)

12:00 PM - 12:15 PM

[21a-146-12] Fabrication of 280nm-band AlGaN DUV LD structure and its current injection characteristics

〇Noritoshi Maeda¹, Masafumi Jo¹, Hirayama Hideki¹ (1.RIKEN)

Session information