Poster presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[21p-PB4-1~8] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Fri. Sep 21, 2018 1:30 PM - 3:30 PM PB (Shirotori Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

[21p-PB4-1] Analysis of optical characteristics and carrier transport
in biased GaAs/AlAs asymmetric-multiple-quantum-well

〇Shoji Goto¹, Kousuke Yoshida¹, Makoto Hosoda², Kouichi Akahane³, Naoki Ohtani¹ (1.Doshisha Univ., 2.Shizuoka Univ., 3.NICT)

1:30 PM - 3:30 PM

[21p-PB4-2] Radiative and non-radiative recombination in Si nanopillar embedded in Si_0.7Ge_0.3 composite film

〇Naoki Matsuda¹, Daisuke Ohori², Seiji Samukawa^2,3, Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki, 2.IFS, Tohoku Univ., 3.AIMR, Tohoku Univ.)

1:30 PM - 3:30 PM

[21p-PB4-3] Room Temperature Negative Differential Resistance of Si/CaF₂ Double-barrier Resonant Tunneling Diodes

〇Kodai Hirose¹, Satoshi Fukuyama¹, Yoshiro Kumagai¹, Hiroki Tonegawa¹, Masahiro Watanabe¹ (1.Tokyo Tech)

1:30 PM - 3:30 PM

[21p-PB4-4] Evaluation of current-voltage characteristics of single barrier tunneling diode using atomically-thin CaF₂/Si heterostructure

〇Satoshi Fukuyama¹, Masahiro Watanabe¹ (1.Tokyo Tech.)

1:30 PM - 3:30 PM

[21p-PB4-5] Room temperature negative differential resistance of CaF₂/Si/CaF₂resonant-tunneling structures fabricated by dry etching

〇(M2)Yoshiro Kumagai¹, Soichiro Ono¹, Kodai Hirose¹, Satoshi Fukuyama¹, Hiroki Tonegawa¹, Masahiro Watanabe¹ (1.Tokyo Tech)

1:30 PM - 3:30 PM

[21p-PB4-6] Size dependence of dielectric function spectra of multilayered CdTe nanocrystals

〇Naoki Inoue¹, DaeGwi Kim², Kazuki Wakita³, YongGU Shim¹ (1.Osaka Pref. Univ., 2.Osaka City Univ., 3.Chiba Inst. Tech.)

1:30 PM - 3:30 PM

[21p-PB4-7] Optical Properties and Stability of CH₃NH₃PbBr₃Nanoparticles with Different Polar Solvents

〇Tougo Hisanaga¹, Kiyoto Matsuishi¹ (1.Tsukuba Univ.)

1:30 PM - 3:30 PM

[21p-PB4-8] Fabrication of densely packed I-III-VI₂ nanoparticle films for realizing QD superlattices

〇Satoshi Okuyama¹, Yasushi Hamanaka¹, Toshihiro Kuzuya², Keiki Takeda², Chihiro Sekine² (1.Nagoya Inst. Tech., 2.Muroran Inst. Tech.)

Session information

[21p-PB4-1~8] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[21p-PB4-1] Analysis of optical characteristics and carrier transport
in biased GaAs/AlAs asymmetric-multiple-quantum-well

[21p-PB4-2] Radiative and non-radiative recombination in Si nanopillar embedded in Si_0.7Ge_0.3 composite film

[21p-PB4-3] Room Temperature Negative Differential Resistance of Si/CaF₂ Double-barrier Resonant Tunneling Diodes

[21p-PB4-4] Evaluation of current-voltage characteristics of single barrier tunneling diode using atomically-thin CaF₂/Si heterostructure

[21p-PB4-5] Room temperature negative differential resistance of CaF₂/Si/CaF₂resonant-tunneling structures fabricated by dry etching

[21p-PB4-6] Size dependence of dielectric function spectra of multilayered CdTe nanocrystals

[21p-PB4-7] Optical Properties and Stability of CH₃NH₃PbBr₃Nanoparticles with Different Polar Solvents

[21p-PB4-8] Fabrication of densely packed I-III-VI₂ nanoparticle films for realizing QD superlattices

Authentication