Band-engineering of semiconductor with a novel SVL multilayered structure

Nobutoshi Takagi; Takaya Ogawa; Hideyuki Okumura; Keiichi Ishihara

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.1 Emerging materials in spintronics and magnetics (including fabrication and charactrization methodologies)

[18a-131-1~10] 10.1 Emerging materials in spintronics and magnetics (including fabrication and charactrization methodologies)

Tue. Sep 18, 2018 9:00 AM - 11:45 AM 131 (131+132)

Tsuyoshi Kondo(TOSHIBA), Yoshio Miura(Kyoto Inst. of Tech.)

9:00 AM - 9:15 AM

[18a-131-1] Band-engineering of semiconductor with a novel SVL multilayered structure

〇(M2)Nobutoshi Takagi¹, Takaya Ogawa¹, Hideyuki Okumura¹, Keiichi Ishihara¹ (1.Kyoto Univ.)

Keywords:semiconductor, magnetic, epitaxial

A research purpose of this work is to change the optical characteristics [transition mode] of semiconductors by fabricating a novel thin film multilayered structure called SVL (spin-valve-like) structure -- through bringing the spin-aligned ferromagnetic material close to the semiconductor thin film at the atomic level. The SVL structure consists of: oriented ferromagnetic film / antiferromagnetic film/substrate. In this study, cobalt/ hematite/sapphire (epitaxially oriented) was fabricated using an RF sputtering method. Changes in the band gap of titanium oxide formed thereon were confirmed.