[18a-131-1~10] 10.1 Emerging materials in spintronics and magnetics (including fabrication and charactrization methodologies)

△ [18a-131-4] Electric and magnetic properties of Ni₇₈Fe₂₂/Alq₃/Ni₇₈Fe₂₂ nanoscale junction devices utilizing magnetic thin-film edges

〇Yuma Sasaki¹, Robin Msiska¹, Takahiro Misawa¹, Sumito Mori¹, Takashi Komine², Norihisa Hoshino³, Tomoyuki Akutagawa³, Masaya Fujioka¹, Junji Nishii¹, Hideo Kaiju¹ (1.RIES, Hokkaido Univ., 2.Eng., Ibaraki Univ., 3.IMRAM, Tohoku Univ.)

Keywords:spintronics, nanoscale junction, organic semiconductor

We propose nanoscale junction devices utilizing magnetic thin-film edges toward the realization of spintronic devices with a high magnetoresistance (MR) ratio and low resistance-area product (RA). In this study, we fabricate Ni₇₈Fe₂₂/Alq₃/Ni₇₈Fe₂₂ junction devices and investigate electric and magnetic properties. As a result, we have observed that the junction area dependence of the resistance (R-S plot) can be divided into three parts: a ballistic regime (S < 40×40 nm²), a transition region (40×40 nm² < S < 560×560 nm²) and the diffusive regime (S ≥ 560×560 nm²). Especially, a low RA (106 mΩµm²) has been realized in devices with a junction area of 33×33 nm². Moreover, MR effect has been successfully observed in this device of the junction area at room temperature.