2018年第79回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.1 新物質・新機能創成(作製・評価技術)

[18a-131-1~10] 10.1 新物質・新機能創成(作製・評価技術)

2018年9月18日(火) 09:00 〜 11:45 131 (131+132)

近藤 剛(東芝)、三浦 良雄(京都工繊大)

10:30 〜 10:45

[18a-131-6] Ultrafast STT-driven domain wall motion in Mn4N microstrips

Toshiki Gushi1,2、Laurent Vila2、Jean-Philippe Attane2、Olivier Fruchart2、Alain Marty2、Stefania Pizzini3、Jan Vogel3、Matic Klug4、Jose Pena-Garcia3、Akihito Anzai1、Taro Komori1、Takashi Suemasu1 (1.Univ. of Tsukuba、2.SPINTEC、3.Institut Neel、4.Kiel Univ.)

キーワード:Domain wall motion, Mn4N, Ferrimagnet

We were interested in Mn4N thin film as a new candidate for spintronic material and evaluated the current-induced domain wall motion (CIDWM) properties. Mn4N is expected to achieve ultrafast domain wall (DW) motion with small current density thanks to the small spontaneous magnetization and perpendicular magnetic anisotropy. In this work, we injected current pulses into 1 and 2-µm-wide Mn4N strips and achieved ultrafast DW motion over 900 m/s with only 1.3 TA/m2 current. This result is one of the highest velocity reported, even compared with SOT-assisted systems and presents the potential of Mn4N as a rare-earth free candidate for CIDWM application.