[18a-145-1~10] 12.4 Organic light-emitting devices and organic transistors

[18a-145-6] Growth mechanism of DPh-DNTT films prepared by vacuum deposition

〇Yoshiaki Hattori¹, Yoshinari Kimura¹, Takumi Yoshioka¹, Masatoshi Kitamura¹ (1.Kobe Univ.)

Keywords:DPh-DNTT, OTFT

Recently, Diphenyl-Dinaphthothienothiophene (DPh-DNTT) is receiving a lot of attention as a new organic material for organic transistor due to it high mobility and stability. Although the thin film of DPh-DNTT can be prepared by vacuum deposition, the influence of deposition condition on the growth mechanism or crystallinity has not been clarified yet. We investigated the growth mechanism of DPh-DNTT by depositing atomically thin film on the thermally oxidized silicon substrate. Initially, the two-dimensional islands nucleate on the surface. These nucleations grow horizontally. After completion of the first layer, second layer also grow similarly. We observed the layer-by-layer growth.