[18a-145-1~10] 12.4 Organic light-emitting devices and organic transistors

[18a-145-7] Fabrication of high performance organic FETs deposited on anodic high-k oxides using solution processed vertically separated, laterally oriented PS/TIPS-pentacene blend films

〇Eiji Itoh¹, Junpei Ueno¹ (1.Shinshu Univ.)

Keywords:organic transistor, lateral orientation, high-k oxide

We investigated the electrical properties and interfacial phenomena of the MIS diodes and field effect transistors consisting of Ta/Ta₂O₅ (or HfO₂)/ polystylene (PS)/ TIPS-pentacene/ MoO₃/ Ag multilayers. A clear vertical phase separation of TIPS-pentacene and PS layers were obtained by controlling the sweep rate of meniscus coating of their blends dissolved in toluene, and it was confirmed by TOF-SIMS and cross-sectional SEM images. The operating voltage and sub-threshold swing values were successfully reduced by the high-k oxide/ PS double layered gate insulator. Optimized meniscus coating of TIPS-pentacene/ PS blends also contributed to the in-plane crystal-growth (pi-pi stacking) of TIPS-pentacene and FET performance.