[18a-146-1~13] 15.4 III-V-group nitride crystals

△ [18a-146-6] Electronic structure analysis at threading dislocation in GaN

〇Takashi Nakano¹, Kenta Chokawa¹, Masaaki Araidai^2,1, Kenji Shiraishi^2,1, Atsushi Oshiyama², Atsushi Tanaka², Yoshio Honda², Hiroshi Amano² (1.Graduduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:gallium nitride, dislocation