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[18a-222-4] Atomic layer Al2O3 thickness to fine-tuning pore surface charge
Keywords:micropore, Atomic Layer Deposition
We fabricated a micropore device coating with Al2O3 membrane using Atomic layer deposition (ALD). We formed Al2O3 membrane in the range of 1nm to 20 nm on a Si3N4 micropore device. Using this device, we measured ionic current changes when particles pass through micropores and investigated pulse size and changes of detection frequency comparing each Al2O3 thickness. When we used carboxylated-polystyrene beads (φ0.78 µm), pulse size changed depending on Al2O3 layer thickness. The zeta potential measurement on the surface of the Si3N4 / Al2O3 membrane revealed that the surface potential changes with accuracy of less than 1 mV depending on the thickness of the coated Al2O3, by the preserved influence of the negative charge on the Si3N4 surface.