[18a-223-1~9] 6.3 Oxide electronics

△ [18a-223-1] Fabrication of Sr₂IrO_4-xF_y thin films by topotacic fluorination

〇Takahiro Maruyama¹, Akira Chikamatsu¹, Tukasa Katayama¹, Kenta Kuramochi^2,3, Hiraku Ogino², Miho Kitamura⁴, Hiroshi Horiba⁴, Hiroshi Kumigashira^4,5, Tetsuya Hasegawa¹ (1.Univ. of Tokyo, 2.AIST, 3.Tokyo Univ. of Science, 4.KEK, 5.Tohoku Univ.)

Keywords:Iridium oxides, oxyfluoride, topotactic reaction

Ir oxides have a rich variety of physical properties which is closely related to the large spin orbital interaction. For example, layered perovskite Sr₂IrO₄ is well-known as the J_eff = 1/2 Mott insulator. In recent years, it has been shown that fluorine doping using topotactic reaction is effective as a method for synthesizing and controlling physical properties of layered perovskite type transition metal oxides. Therefore, in this study, we tried topotactic fluorine doping on the Sr₂IrO₄ thin films and succeeded in synthesizing the new acid fluoride Sr₂IrO_4-xF thin films.