[18a-224B-1~10] 17.3 Layered materials

[18a-224B-3] Growth of TMDs with Cold-walled Metal-Organic Chemical Vaper Deposition

〇(M1)Satoshi Iida¹, Takato Hotta¹, Hisanori Shinohara¹, Ryo Kitaura¹ (1.Nagoya Univ.)

Keywords:Atomic Layered Materials, Transition Metal Dichalcogenides, Metal-Organic Chemical Vapor Deposition

In this study, we applied Metal-Organic Chemical Vapor Deposition (MOCVD) to the atomic layered materials, especially transition-metal dichalcogenide (TMD). MOCVD is a great success in compound semiconductors as a crystal growth method with good controllability.We developed a Cold-Walled MOCVD setups.Using this machine, we tried growth of MoSe₂ which is a type of TMD onto c-plane sapphire and evaluated . Detailed results will be discussed on the day.