[18a-232-1~11] 3.13 Semiconductor optical devices

▲ [18a-232-9] Gas Species Comparison of Fast Atom Beam Irradiation to Photoluminescence Properties of GaInAs/InP layers for Surface Activated Bonding

〇Yuning Wang¹, Takuya Mitarai¹, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech, 2.FIRST)

Keywords:Fast Atom Beam, Surface Activated Bonding, Photoluminescence

Hydrophilic bonding or plasma activated bonding (PAB) are usually used for hybrid wafer bonding. However, to achieve high bonding strength, the annealing temperature of higher than 150°C, resulting in the thermal stress caused by the difference between thermal expansion coefficients of bonded wafers, and long cooling time is required. To deal with the mentioned problems, surface activated bonding (SAB) based on fast atom beam (FAB) was proposed in recent years, which can realize wafer bonding at room temperature. In our previous report, we reported the influence of Ar-FAB to photoluminescence properties of GaInAs/InP wafers. In this report, we assessed the influence by other gases N₂ and Xe.