[18a-235-1~9] 15.5 Group IV crystals and alloys

△ [18a-235-3] Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser depositon

〇(M1)Teppei Nakashima¹, Toshifumi Kikuchi^1,2, Kaname Imokawa^1,2, Daisuke Nakamura¹, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton NEXT GLP, Kyushu Univ.)

Keywords:GeSn, PLD, Nano-particle

GeSn with a substitutional Sn concentration above 10% are known to have a direct-transition band structure. Therefore, it is ex-pected that GeSn films can be used as optical materials in silicon-photonics devices. However, GeSn films with a high substitutional Sn concentration are difficult to form because the solubility limit of Sn in Ge crystals is approximately 2% at thermal equilibrium. We propose that GeSn particles with high substitutional Sn concentrations can be synthesized by pulsed laser deposition (PLD) in ambient Ar at low pressure(~100Pa). In this presentation, we report the crystallinity of the GeSn particles and the sub-stitutional ratio of Sn in GeSn prepared by PLD.