[18p-133-1~10] Current status and future prospect of chalcogenide-based thin film solar cells technology

[18p-133-10] Characterization of the electronic structure at CdS/Cu₂ZnGeSe₄ heterointerface

〇Takehiko Nagai¹, Takuya Shimamura², Hitoshi Tampo¹, Shinho Kim¹, Hajime Shibata¹, Koji Matsubara¹, Shigeru Niki¹, Norio Terada² (1.AIST, 2.Kagoshima Univ)

Keywords:Band offset, Kesterite, UPS/IPES

We will report the electronic structure at the interface between CdS and Cu₂ZnGeSe₄ (CZGSe), which relate with the solar cell performances, by using ultraviolet photoemission-, inversed photoemission-, X-ray photoemission spectroscopy (UPS, IPES, and XPS).