[18p-146-1~8] New Process Technology of Nitride Semiconductors

[18p-146-3] Development of sputtering epitaxial growth processes for AlGaN

〇Hiroshi Fujioka^1,2, Yuya Sakurai¹, Kohei Ueno¹, Atsushi Kobayashi¹ (1.The Univ. of Tokyo, 2.JST-ACCEL)

Keywords:Nitride semiconductors, crystalline defects

In this presentation, we will discuss low temperature sputtering crystal growth and introduction of the singularity structures for AlGaN which has attracted much attention as a material for UV light emitting devices. We will put special emphasis on the donor or acceptor doping to AlGaN as the simplest example of the singularity structure in AlGaN system. We will also discuss feasibility of suppression of compensation defect introduction by the defect quasi-Fermi level control via high energy particle bombardment in low pressure sputtering plasma.