[18p-212A-1~14] 3.15 Silicon photonics

[18p-212A-1] [Young Scientist Presentation Award Speech] Directly modulated quantum dot lasers epitaxially grown on Si

〇Daisuke Inoue^1,2, Daehwan Jung², Justin Norman², Yating Wan², Nobuhiko Nishiyama¹, Shigehisa Arai¹, Arthur C. Gossard², John E. Bowers² (1.Tokyo Tech., 2.ECE, UCSB)

Keywords:Quantum dot laser, direct growth on silicon, direct modulation

Quantum dot (QD) lasers have been expected to surpass quantum-well or bulk lasers grown on Si thanks to its tolerance for threading dislocations. Although significant progress has been achieved, direct modulation properties of QD laser grown on Si have not been revealed. Here, we briefly review recent results and future prospects of QD lasers epitaxially grown on Si.