[18p-212B-1~11] 【CS.8】 Code-sharing Session of 7.4 & 9.5

[18p-212B-4] Atomic-scale capturing of the growth process of Bi ultra-thin film by high-speed X-ray CTR scattering measurement

〇Tetsuroh Shirasawa¹, Wolfgang Voegeli², Yuta Tameike², Etsuo Arakawa², Toshio Takahashi² (1.AIST, 2.Tokyo Gakugei Univ.)

Keywords:surface x-ray diffraction, ultrathin film, growth process

The growth process of the ultrathin Bi film on Si(111) substrate is captured at the atomic-scale by using the high-speed X-ray CTR scattering measurement in a wavelength-dispersive mode. Previously, on the bases of low-energy electron diffraction experiments, which is only sensitive to the surface structure, it was suggested that initially the Bi film crystallizes in the black phosphorus structure, and then whole the film is transformed to the bulk Bi structure above the critical thickness of a few nm. We found that even above the critical thickness, the black phosphorus structure is remained at the interface.