The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

4 JSAP-OSA Joint Symposia 2018 » 4.6 Terahertz Photonics

[18p-221B-1~15] 4.6 Terahertz Photonics

Tue. Sep 18, 2018 1:15 PM - 6:30 PM 221B (221-2)

Toshihiko Kiwa(Okayama Univ.), Shintaro Hisatake(Gifu Univ.), Shinichi Watanabe(Keio Univ.)

5:15 PM - 5:30 PM

[18p-221B-11] Trade-off Study between Cutoff Frequency and Responsivity of SOI CMOS-based Terahertz Antenna-Coupled Bolometers with Different Temperature Sensors: MOSFET, PN-Junction Diode, Resistor and Thermocouple

DURGADEVI ELAMARAN1, TAKEO UETA2, HIROAKI SATOH3, NORIHISA HIROMOTO1, HIROSHI INOKAWA3 (1.GSST, Shizuoka Univ, 2.GSIST, Shizuoka Univ, 3.RIE, Shizuoka Univ)

Keywords:Antenna-coupled bolometer, Figure of merit

For bolometers, it is well known that there is a trade-off relationship between cutoff frequency (fc) determined by the thermal response speed and responsivity (Rv), and therefore it is appropriate to consider the product of fc and Rv as a figure of merit (FOM) to make a fair comparison among different bolometers. In this study, antenna-coupled bolometers with different temperature sensors, such as MOSFET, pn-junction diode and resistors with various materials (n+ and p+ single crystalline silicon, n+ poly crystalline silicon) and thermocouple with two different combinations (n+ and p+ single crystalline silicon, n+ poly crystalline silicon and p+ single crystalline silicon) were fabricated by 0.6 µm SOI CMOS technology under the constraint of 1-THz operation, and compared considering the trade-off relationship.Obtained fc and Rv of different temperature sensors are summarized in Fig. 2, where constant fc´Rv lines are drawn and the FOM is improved toward the upper right corner. MOSFET bolometer shows the best FOM due to its high responsivity as a result of its amplification function.