2018年第79回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

4 JSAP-OSA Joint Symposia 2018 » 4.6 Terahertz Photonics

[18p-221B-1~15] 4.6 Terahertz Photonics

2018年9月18日(火) 13:15 〜 18:30 221B (221-2)

紀和 利彦(岡山大)、久武 信太郎(岐阜大)、渡邉 紳一(慶大)

17:15 〜 17:30

[18p-221B-11] Trade-off Study between Cutoff Frequency and Responsivity of SOI CMOS-based Terahertz Antenna-Coupled Bolometers with Different Temperature Sensors: MOSFET, PN-Junction Diode, Resistor and Thermocouple

DURGADEVI ELAMARAN1、TAKEO UETA2、HIROAKI SATOH3、NORIHISA HIROMOTO1、HIROSHI INOKAWA3 (1.GSST, Shizuoka Univ、2.GSIST, Shizuoka Univ、3.RIE, Shizuoka Univ)

キーワード:Antenna-coupled bolometer, Figure of merit

For bolometers, it is well known that there is a trade-off relationship between cutoff frequency (fc) determined by the thermal response speed and responsivity (Rv), and therefore it is appropriate to consider the product of fc and Rv as a figure of merit (FOM) to make a fair comparison among different bolometers. In this study, antenna-coupled bolometers with different temperature sensors, such as MOSFET, pn-junction diode and resistors with various materials (n+ and p+ single crystalline silicon, n+ poly crystalline silicon) and thermocouple with two different combinations (n+ and p+ single crystalline silicon, n+ poly crystalline silicon and p+ single crystalline silicon) were fabricated by 0.6 µm SOI CMOS technology under the constraint of 1-THz operation, and compared considering the trade-off relationship.Obtained fc and Rv of different temperature sensors are summarized in Fig. 2, where constant fc´Rv lines are drawn and the FOM is improved toward the upper right corner. MOSFET bolometer shows the best FOM due to its high responsivity as a result of its amplification function.