The 79th JSAP Autumn Meeting, 2018

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Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[18p-223-1~17] 6.3 Oxide electronics

Tue. Sep 18, 2018 1:15 PM - 6:00 PM 223 (223)

Ryota Takahashi(東大)

3:45 PM - 4:00 PM

△ [18p-223-10] Fabrication and electrical characteristics of (La1-xSrx)VO3/p-Si(100) junctions

〇Ryoichi Nemoto1, Koji Arafune1, Haruhiko Yoshida1, Shin-ichi Satoh1, Yasushi Hotta1 (1.Univ. of Hyogo)

Keywords:semiconductor, transition metal oxide, strong correlated electron