[18p-223-1~17] 6.3 Oxide electronics

△ [18p-223-11] Clarification of crystal orientation dependence of strain-induced transport modulation driven by electrostatic attractive force in VO₂ freestanding nanowire transistors

〇(M1)Fumiya Endo¹, Teruo Kanki¹, Luca Pellegrino², Nicola Manca³, Daniele Marre^2,3, Hidekazu Tanaka¹ (1.Osaka Univ., 2.CNR-SPIN, 3.Genova Univ.)

Keywords:transistor, nanowire, strain