The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[18p-223-1~17] 6.3 Oxide electronics

Tue. Sep 18, 2018 1:15 PM - 6:00 PM 223 (223)

Ryota Takahashi(東大)

1:45 PM - 2:00 PM

[18p-223-3] Growth and characterization of VO2 thin films on hexagonal boron nitride (2)

Shingo Genchi1, Koji Shigematsu2, Shodai Aritomi2, Mahito Yamamoto1, Teruo Kanki1, Kenji Watanabe3, Takashi Taniguchi3, Yasukazu Murakami2, Hidekazu Tanaka1 (1.Osaka Univ., 2.Kyusyu Univ., 3.NIMS)

Keywords:metal-insulator-insulator, vanadium dioxide, hexagonal boron nitride

We reported in the previous JSAP that VO2 can be grown on hexagonal boron nitride (hBN), which is a layered material with good insulation. When Al2O3 was utilized as a supporting substrate, wrinkles were formed on VO2/hBN, resulting in formation of cracks after electric property measurements. This time we used SiO2 as a supporting substrate and avoided formation of wrinkles on VO2/hBN, obtaining flat VO2 thin films. Besides, we observed cross-section scanning transmission electron microscopy (STEM) images and analized the crystal and surface structure of VO2/hBN.