[18p-223-1~17] 6.3 Oxide electronics

[18p-223-3] Growth and characterization of VO₂ thin films on hexagonal boron nitride (２)

〇Shingo Genchi¹, Koji Shigematsu², Shodai Aritomi², Mahito Yamamoto¹, Teruo Kanki¹, Kenji Watanabe³, Takashi Taniguchi³, Yasukazu Murakami², Hidekazu Tanaka¹ (1.Osaka Univ., 2.Kyusyu Univ., 3.NIMS)

Keywords:metal-insulator-insulator, vanadium dioxide, hexagonal boron nitride

We reported in the previous JSAP that VO₂ can be grown on hexagonal boron nitride (hBN), which is a layered material with good insulation. When Al₂O₃ was utilized as a supporting substrate, wrinkles were formed on VO₂/hBN, resulting in formation of cracks after electric property measurements. This time we used SiO₂ as a supporting substrate and avoided formation of wrinkles on VO₂/hBN, obtaining flat VO₂ thin films. Besides, we observed cross-section scanning transmission electron microscopy (STEM) images and analized the crystal and surface structure of VO₂/hBN.