[18p-223-1~17] 6.3 Oxide electronics

△ [18p-223-5] Electron Accumulation at 5d orbitals of WO₃ ultra-thin film on n-type Si substrate

〇(PC)Fuminao Kishimoto¹, Tsubaki Shuntaro², Wada Yuji² (1.Univ. Tokyo, 2.Tokyo Tech.)

Keywords:n-n heterojunction, Soft chemical, Tungsten Oxide

Controlling the electronic state of the semiconductor surface enables a creation of advanced catalyst or a sensor development. In general, in a heterojunction structure between n-type semiconductors, it is possible to create an electronic state where one semiconductor has excess electrons due to static electron transfer at the interface in a thermal equilibrium state. In this study, we prepared a WO₃ on an n-type Si substrate with an excessively dopant of P (n⁺⁺Si). In such an n-n heterojunction, an static electron transfer takes place from Si to WO₃ and electrons are accumulated in the 5d orbit of the W atom on the surface.