2018年第79回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

17 ナノカーボン » 17.3 層状物質

[18p-224B-1~11] 17.3 層状物質

2018年9月18日(火) 13:15 〜 16:00 224B (224-2)

北浦 良(名大)

14:00 〜 14:15

[18p-224B-4] Generation of valley polarization and coherence in a monolayer MoS2 probed by polarized photoluminescence measurement

〇(M1)Eito Asakura1、Masaki Suzuki1、Kousuke Nagashio2、Makoto Kohda1,3、Junsaku Nitta1,3 (1.Tohoku Univ.、2.The Univ. of Tokyo、3.CSRN)

キーワード:layered semiconductor, valleytronics, TMDC

Monolayer transition metal dichalcogenides (TMDCs) are attracting much attention for using valley degree of freedom in future quantum information technology since a superposition between K and K’ valleys is utilized as a quantum bit. In order to realize valley quantum state in TMDCs, generation and detection of valley polarization and its coherence are important steps. Here, we report the generation of valley polarization and coherence in monolayer MoS2 probed polarized photoluminescence.