[18p-224B-1~11] 17.3 層状物質

▲ [18p-224B-6] Growth and structural characterization of vanadium selenide thin films grown by molecular-beam epitaxy

〇Yue Wang¹、Masaki Nakano¹、Satoshi Yoshida¹、Mohammad Saeed Bahramy^1,2、Hideki Matsuoka¹、Yuki Majima¹、Yuta Ohigashi¹、Yuta Kashiwabara¹、Masato Sakano¹、Kyoko Ishizaka^1,2、Yoshihiro Iwasa^1,2 (1.Dept. Appl. Phys., Univ. Tokyo、2.RIKEN CEMS)

キーワード：2D materials, Transition-metal dichalcogenide, Molecular-beam epitaxy

Transition-metal dichalcogenide (TMDC) is a representative layered material providing unique and intriguing properties at monolayer limit. The researches on monolayer TMDCs have been mainly performed for semiconducting TMDCs like MoS₂ presenting valley-related phenomena as well as for metallic TMDCs like NbSe₂ and TaS₂ showing unconventional superconductivity. On the other hand, magnetic properties of TMDCs had been almost unexplored until recent study on monolayer VSe₂ demonstrated room temperature ferromagnetism, while very recent study on angle-resolved photoemission spectroscopy and x-ray magnetic circular dichroism verified absence of ferromagnetic order in this compound above 10 K. We have recently discovered that vanadium selenide epitaxial thin films grown by molecular-beam epitaxy based on our growth recipe exhibit peculiar magnetic properties with clear anomalous Hall effect at low temperature. In this presentation, we will introduce our sample fabrication process and discuss structural properties of our magnetic vanadium selenide epitaxial thin films.