The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

8 Plasma Electronics » 8.6 Plasma Electronics English Session

[18p-234A-1~3] 8.6 Plasma Electronics English Session

Tue. Sep 18, 2018 12:00 PM - 12:45 PM 234A (234-1)

Osamu Sakai(Univ. of Shiga Pref.)

12:00 PM - 12:15 PM

[18p-234A-1] Etching of glass by floating-wire assisted atmospheric pressure plasma

〇(PC)Thi-Thuy-Nga Nguyen1, Minoru Sasaki2, Hidefumi Odaka3, Takayoshi Tsutsumi1, Kenji Ishikawa1, Masaru Hori1 (1.Nagoya Univ., 2.Toyota Tech. Inst., 3.Asahi Glass Co.)

Keywords:glass etching, atmospheric pressure plasma, inductively coupled plasma

Dry etching of glass is generally exhibited very low etch rates. By using a long floating wire, it is possible to ignite plasma at atmospheric pressure and generate plasma at a remote region. Here we have developed a high-density atmospheric pressure inductively coupled plasma that can be remotely generated by placing a 170-mm-long floating wire inside of a discharge tube. The 200-mm-high L-tube having a slit at the bottom was used to remotely generate a plasma with an electron density of 1014 cm-3 for a large treatment area. By introducing SF6 gas to the region where an Ar plasma blew out from the slit of the L-tube, a quartz glass plate (15x20 mm2) could be etched for a large area with a maximum etch rate of 1.7 µm/min and an average substrate removal rate of 0.3 mm3/min. The high-density plasma remotely generated from the L-shaped discharge tube could be developed for high-rate and large-scale glass etching applications.