[18p-234B-1~19] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

[18p-234B-14] Sublattice Reversal in AlAs/Ge/AlAs Heterostructures Grown on (113)A GaAs Substrate

〇Xiangmeng Lu¹、Yasuo Minami¹、Takahiro Kitada¹ (1.Tokushima Univ.)

キーワード：sublattice reversal, MBE, heterostructures

We have demonstrated sublattice reversal (SR) in GaAs/Ge/GaAs heterostructures on high-index (113)B GaAs substrates grown by molecular beam epitaxy (MBE) in our previous research. However, SR was not achieved in GaAs/Ge/GaAs heterostructures grown on the (113)A GaAs substrate. In this research, we investigated AlAs/Ge/AlAs heterostructures grown on (113)A and (113)B GaAs substrates by MBE. SR was achieved in AlAs/Ge/AlAs heterostructures grown on the (113)A GaAs substrate.