3:15 PM - 3:30 PM
[18p-234B-8] Effects of GaAs-capping temperature on the emission wavelength of InAs quantum dots on nitrogen-doped GaAs (001) surfaces
Keywords:quantum dot, nitrogen doping, emission wavelength
Oral presentation
15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
Tue. Sep 18, 2018 1:15 PM - 6:30 PM 234B (234-2)
Takeo Kageyama(QD Laser), Ryo Nakao(NTT), Itaru Kamiya(Toyota Technological Institute)
3:15 PM - 3:30 PM
Keywords:quantum dot, nitrogen doping, emission wavelength