The 79th JSAP Autumn Meeting, 2018

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[18p-235-1~14] 15.5 Group IV crystals and alloys

Tue. Sep 18, 2018 1:15 PM - 5:00 PM 235 (3Ｆ_Lounge２)

Keisuke Arimoto(Univ. of Yamanashi), Katsunori Makihara(Nagoya Univ.)

1:15 PM - 1:30 PM

[18p-235-1] Formation and Optoelectronic Characterization of High-Si-Content Strain-Relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure

〇Masahiro Fukuda1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2, Shigeaki Zaima3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Inst. Innovation for Future Soc., Nagoya Univ.)

Keywords:semiconductor, GeSiSn, GeSn